Three-Dimensional Silicon Structure For Integrated Circuits And Cooling Thereof

An apparatus, comprising:

• a first semiconductor device, comprising:
• a first silicon substrate having a first primary side and a second primary side opposite the first primary side, the first primary side of the first silicon substrate including a first circuit structure disposed thereon, the second primary side of the first silicon substrate including a plurality of first grooves thereon, at least some of the first grooves filled with a first phase-change material;
• and
• a sheet disposed on the second primary side of the first silicon substrate of the first semiconductor device such that the first phase-change material is sealed within the at least some of the first grooves by the first silicon structure and the sheet.