Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

A Zener diode, comprising:

• a semiconductor substrate;
• a P-N junction formed on or in the substrate;
• a polysilicon layer in contact with a first semiconductor layer that is in contact with a second semiconductor layer to define therebetween the P-N junction;
• a first conductive layer disposed on the polysilicon layer;
• and
• a second conductive layer disposed on a surface of the substrate opposing a surface of the substrate over which the first conductive layer is disposed.

A method of fabricating a semiconductor device, comprising:

• forming a first oxide layer over a portion of a semiconductor substrate formed from a first semiconductor material having a first conductivity type such that a remaining portion of the semiconductor substrate is exposed;
• forming a protective layer on a first surface of the semiconductor substrate and the first oxide layer;
• introducing a dopant of the second conductivity type into the semiconductor substrate through the protective layer to form a junction layer that defines a junction with the semiconductor substrate;
• forming a first conductive layer over the junction layer;
• and
• forming a second conductive layer on a second surface of the semiconductor substrate opposing the first a surface of the semiconductor substrate.

A semiconductor device comprising:

• a semiconductor substrate;
• a P-N junction formed on or in the substrate;
• a protective layer located over the P-N junction, the protective layer having a thickness that allows a dopant of the first or second conductivity type to be introduced therethrough to form a junction layer in the semiconductor substrate, the junction layer being one of the layers that define the PN junction;
• a first conductive layer disposed on the protective layer;
• and
• a second conductive layer disposed on a surface of the substrate opposing a surface of the substrate over which the first conductive layer is disposed.