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US 2015/0091135 A1Published application
Semiconductor device
AssigneeSK hynix Inc.
InventorsSung Lae OH, Chang Man SON, Sang Hyun SUNG, Dae Hun KWAK
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Abstract
A semiconductor device includes an insulating layer formed on a substrate, and a capacitor including first and second electrodes formed in the insulating layer, wherein a lower surface of the first electrode is formed to have a greater depth than a lower surface of the second electrode in the insulating layer.
Claims20
A semiconductor device, comprising:
- an insulating layer formed on a substrate;
- and
- a capacitor including first and second electrodes formed in the insulating layer,
- wherein a lower surface of the first electrode is formed to have a greater depth than a lower surface of the second electrode, in the insulating layer.
1 more element
A semiconductor device, comprising:
- a lower wire formed on a substrate in a first direction;
- impurity injection regions formed inside the substrate adjacent to edges of the lower wire;
- a first insulating layer formed on the substrate to cover the lower wire;
- first electrodes passing through the first insulating layer to be connected to the lower wire;
- a second insulating layer formed on the first insulating layer to cover the first electrodes;
- and
- second electrodes passing through the second insulating layer and a part of the first insulating layer to have lower surfaces positioned higher than lower surfaces of the first electrodes,
- wherein the first and second electrodes form capacitors.
5 more elements
Dependencies are inferred from the claim text.