Atomic layer deposition
AssigneeDyson Technology Limited
InventorsGehan Anjil Joseph Amaratunga, Youngjin Choi, Sai Giridhar Shivareddy, Nathan Charles Brown, Charles Anthony Neild Collis
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Abstract
A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay of at least one minute between the first deposition step and the second deposition step. Each deposition step comprises a plurality of deposition cycles. The delay is introduced to the deposition process by prolonging a period of time for which a purge gas is supplied to a process chamber housing the substrate at the end of a selected one of the deposition cycles.
Claims39
A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay between the first deposition step and the second deposition step.
A method of depositing a material on a substrate using an atomic layer deposition process in a chamber, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and for a period of time between the first deposition step and the second deposition step maintaining a substantially constant pressure within the chamber.
6-8. (canceled)
A method of depositing a material on a substrate, wherein a plurality of atomic layer deposition cycles are performed on a substrate located in a process chamber to deposit the coating on the substrate, each deposition cycle comprising introducing a plurality of precursors sequentially into the chamber, and, after introducing each precursor into the chamber, introducing a purge gas to the chamber for a period of time, and wherein, for a selected one of the deposition cycles performed before a final deposition cycle, the duration of the period of time for which purge gas is supplied to the chamber immediately prior to the commencement of the subsequent deposition cycle is greater than the duration of that period of time for each of the other deposition cycles.
18-20. (canceled)
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Dependencies are inferred from the claim text.