Magnetic tunnel junctions with control wire

A magnetic tunnel junction device comprising:

• a first magnetic tunnel junction (MTJ) element comprising
• a first top ferromagnet layer formed of a first magnetic material;
• a first tunneling layer;
• and
• a bottom ferromagnet layer formed of a second magnetic material,
• wherein the first tunneling layer is mounted between the first top ferromagnet layer and the bottom ferromagnet layer;
• a second MTJ element comprising;
• a second top ferromagnet layer formed of a third magnetic material;
• a second tunneling layer;
• and
• the bottom ferromagnet layer, wherein the second tunneling layer is mounted between the second top ferromagnet layer and the bottom ferromagnet layer;
• and
• a control wire configured to conduct a charge pulse, wherein a direction of charge flow in the control wire extends substantially perpendicular to a magnetization direction of the first top ferromagnet layer and of the second top ferromagnet layer, wherein the direction of charge flow in the control wire extends between the first top ferromagnet layer and the second top ferromagnet layer, wherein the control wire is positioned sufficiently close to the first top ferromagnet layer and to the second top ferromagnet layer to reverse the magnetization direction of the first top ferromagnet layer and of the second top ferromagnet layer when the charge pulse flows therethrough while not reversing the magnetization direction of the bottom ferromagnet layer when the charge pulse flows therethrough.