Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers

A non-volatile memory device, comprising:

• a bottom electrode;
• a fixed magnetic layer disposed above the bottom electrode;
• a dielectric layer disposed above the fixed magnetic layer;
• a first free magnetic layer disposed above the dielectric layer;
• a second free magnetic layer magnetically coupled with the first free magnetic layer;
• a top electrode disposed above the second free magnetic layer;
• and
• a transistor electrically connected to the top or the bottom electrode, a source line, and a word line.

A material layer stack for a magnetic tunneling junction, the material layer stack comprising:

• a fixed magnetic layer;
• a dielectric layer disposed above the fixed magnetic layer;
• a free magnetic layer disposed above the dielectric layer;
• and
• a multi-layer stack that alternates ferromagnetic and non-magnetic layers, the multi-layer stack is magnetically coupled with the free magnetic layer.