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US 2015/0091105 A1Published application
Continuous tuning of erbium silicide metal gate effective work function via a pvd nanolaminate approach for mosfet applications
AssigneeIntermolecular, Inc.
InventorsZhendong Hong, Ashish Bodke, Olov Karlsson
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Abstract
Erbium silicide layers can be used in CMOS transistors in which the work function of the erbium silicide layers can be tuned for use in PMOS and NMOS devices. A nano-laminate sputtering approach can be used in which silicon and erbium layers are alternatingly deposited to determine optimum layer properties, composition profiles, and erbium to silicon ratios for a particular gate stack.
Claims20
A method of forming a metal gate stack, comprising:
- providing a substrate;
- forming a first layer above the substrate,
- wherein the first layer comprises a dielectric material;
- forming a multilayer comprising a second layer and a third layer above the first layer,
- wherein the second layer comprises silicon,
- wherein the third layer comprises erbium;
- and
- annealing the second and third layers to form an erbium silicide layer.
5 more elements
A method of forming a metal gate stack, comprising:
- providing a substrate;
- depositing a first layer above the substrate,
- wherein the first layer comprises a dielectric material;
- depositing a second layer above the first layer,
- wherein the second layer comprises erbium silicide,
- wherein the second layer comprises a gradient of composition ratio of erbium and silicon.
3 more elements
A semiconductor device, comprising:
- a substrate;
- a first layer disposed above the substrate,
- wherein the first layer comprises a dielectric material;
- a second layer disposed above the first layer,
- wherein the second layer comprises erbium silicide,
- wherein the second layer comprises a gradient of composition ratio of erbium and silicon.
3 more elements
Dependencies are inferred from the claim text.