Semiconductor structure and semiconductor device having the same
AssigneeRichtek Technology Corporation
InventorTsung-Yi Huang
Life of this patent
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Abstract
The invention provides a semiconductor structure and a semiconductor device having such semiconductor structure. The semiconductor structure includes: a substrate; a first well having a first conductivity type, which is provided on the substrate; a second well having a second conductivity type and contacting the first well at a boundary in between in a lateral direction; and a plurality of mitigation regions having the first conductivity type or the second conductivity type, provided in the first well and being close to the boundary in a lateral direction and penetrating the first well in a vertical direction.
Claims16
A semiconductor structure, comprising:
- a substrate;
- a first well having a first conductivity type, provided on the substrate;
- a second well having a second conductivity type and contacting the first well at a boundary in between in a lateral direction, the second conductivity type being opposite to the first conductivity type;
- and
- a plurality of first mitigation regions having the first conductivity type or the second conductivity type, provided in the first well and being close to the boundary in a lateral direction and penetrating through the first well from an upper side of the first well to reach a lower side of the first well in a vertical direction.
A semiconductor device, comprising:
- a semiconductor structure, comprising:
- a substrate;
- a first well having a first conductivity type, provided on the substrate;
- a second well having a second conductivity type and contacting the first well at a boundary in between in a lateral direction, the second conductivity type being opposite to the first conductivity type;
- and
- a plurality of mitigation regions having the first conductivity type or the second conductivity type, provided in the first well and being close to the boundary in a lateral direction and penetrating through the first well from an upper side of the first well to reach a lower side of the first well in a vertical direction;
- a gate, formed on the first well;
- and
- a source and a drain, respectively formed in the first well and at two sides of the gate.
Dependencies are inferred from the claim text.