Semiconductor device and fabrication method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLilly SU, Pang-Yen TSAI, Tze-Liang LEE, Chii-Horng LI, Yen-Ru LEE, Ming-Hua YU
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Abstract
A semiconductor device includes a gate stack, an isolation structure and a strained feature. The gate stack is over a substrate. The isolation structure is in the substrate. The strained feature is disposed between the gate stack and the isolation structure and disposed in the substrate. The strained feature includes an upper surface adjacent to the isolation structure having a first crystal plane and a sidewall surface adjacent to the gate stack having a second crystal plane. The first crystal plane is different from the second crystal plane.
Claims20
A semiconductor device, comprising:
- a gate stack over a substrate;
- an isolation structure in the substrate;
- and
- a strained feature disposed between the gate stack and the isolation structure and disposed in the substrate, wherein the strained feature comprises:
- an upper surface adjacent to the isolation structure having a first crystal plane;
- and
- a sidewall surface adjacent to the gate stack having a second crystal plane,
- wherein the first crystal plane is different from the second crystal plane.
An integrated circuit, comprising:
- a gate over a substrate;
- an isolation structure in the substrate;
- a strained feature disposed between the gate and the isolation structure and disposed in a wedge-shaped recess cavity in the substrate, wherein the strained feature comprises an upper surface not parallel to a top surface of the substrate;
- and
- a cap layer over the strained feature.
A semiconductor device, comprising:
- a first gate and a second gate over a substrate;
- an isolation structure in the substrate;
- a first strained feature disposed between the first gate and the isolation structure and disposed in the substrate, wherein the first strained feature comprises a first upper surface having a first crystal plane;
- and
- a second strained feature disposed between the first gate and the second gate and disposed in the substrate, wherein the second strained feature comprises a second upper surface having a second crystal plane, wherein the first crystal plane is different than the second crystal plane.
Dependencies are inferred from the claim text.