Semiconductor device
AssigneeDelta Electronics, Inc.
InventorsLi-Fan LIN, Hsuan-Wen CHEN
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Abstract
A semiconductor device includes a substrate and a plurality of transistors arranged on the substrate in an array. The transistor includes a first electrode, a plurality of second electrodes, and a gate electrode. The second electrodes are arranged around the first electrode. The gate electrode is located between the first electrode and the second electrodes. The first electrode is a circle or polygon. The gate electrode is around the first electrode, and an edge of the gate electrode facing the first electrode has a shape corresponding to that of the first electrode.
Claims19
A semiconductor device, comprising:
- a substrate;
- and
- a plurality of transistors arranged on the substrate, wherein each of the transistors comprises:
- an active layer, disposed on the substrate;
- a first electrode, disposed on the active layer;
- a plurality of second electrodes, disposed on the active layer, and annularly arranged on the first electrode;
- and
- a gate electrode, disposed on the active layer, and located between the first electrode and the second electrodes;
- wherein the first electrode is a circle or polygon, and the polygon is at least pentagon;
- wherein the gate electrode is around the first electrode, and an edge of the gate electrode facing the first electrode has a shape corresponding to that of the first electrode.
A semiconductor device, comprising:
- a substrate;
- an active layer, disposed on the substrate;
- a protective layer, disposed on the active layer, having a plurality of first openings, a plurality of second openings, and a plurality of third openings, wherein each of the first openings is a circle or polygon, and the polygon is at least pentagonal, each of the second openings is around one of the first openings, an edge of each of the second openings facing the first opening therein has a shape corresponding to that of the first opening, and the third openings are located between the second openings;
- a plurality of drain electrodes respectively located in the first openings;
- a gate electrode comprising a first portion and a second portion connected to the first portion, wherein the first portion is located in the second openings, and the second portion is disposed on the first portion and the protective layer;
- and
- a plurality of source electrodes respectively located in the third openings.
Dependencies are inferred from the claim text.