Dynamic Threshold MOS and Methods of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJam-Wem Lee
Life of this patent
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Abstract
A chip includes a semiconductor substrate, a well region in the semiconductor substrate, and a Dynamic Threshold Metal-Oxide Semiconductor (DTMOS) transistor formed at a front side of the semiconductor substrate. The DTMOS transistor includes a gate electrode, and a source/drain region adjacent to the gate electrode. The source/drain region is disposed in the well region. A well pickup region is in the well region, and the well pickup region is at a back side of the semiconductor substrate. The well pickup region is electrically connected to the gate electrode.
Claims20
An integrated circuit structure comprising:
- a first chip comprising:
- a semiconductor substrate;
- a well region in the semiconductor substrate;
- a Dynamic Threshold Metal-Oxide Semiconductor (DTMOS) transistor formed at a front side of the semiconductor substrate, wherein the DTMOS transistor comprises:
- a gate electrode;
- and
- a source/drain region adjacent to the gate electrode, wherein the source/drain region is disposed in the well region;
- and
- a well pickup region in the well region, wherein the well pickup region is at a back side of the semiconductor substrate, and wherein the well pickup region is electrically connected to the gate electrode.
An integrated circuit structure comprising:
- a semiconductor substrate;
- a well region extending from a front surface of the semiconductor substrate to a back surface of the semiconductor substrate;
- a well pickup region in the well region, with the well pickup region extending from the back surface of the semiconductor substrate into the well region, wherein the well pickup region and the well region are of a first conductivity type;
- a silicide region contacting a surface of the well pickup region;
- a Dynamic Threshold Metal-Oxide Semiconductor (DTMOS) transistor formed at a front side of the semiconductor substrate, wherein the DTMOS transistor comprises a gate electrode;
- and
- metallic features connecting the silicide region to the gate electrode.
A method comprising:
- forming a well region extending from a back surface of a semiconductor substrate into the semiconductor substrate;
- forming a well pickup region extending from the back surface of the semiconductor substrate into the well region;
- forming a transistor at a front surface of the well region, wherein the front surface of the well region is comprised in a front surface of the semiconductor substrate, and wherein the forming the transistor comprises forming a gate electrode;
- and
- forming metallic features electrically interconnecting the gate electrode and the well pickup region.
Dependencies are inferred from the claim text.