Integrated Circuit and Method of Manufacturing an Integrated Circuit
AssigneeInfineon Technologies AG
InventorsMartin Vielemeyer, Andreas Meiser, Till Schloesser, Franz Hirler, Martin Poelzl
Life of this patent
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Abstract
An integrated circuit includes a transistor in a semiconductor substrate having a main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, a gate electrode, and a gate dielectric adjacent to the gate electrode. The gate electrode is disposed adjacent to at least two sides of the channel region. The channel region and the drift zone are disposed along a first direction parallel to the main surface between the source region and the drain region. The gate dielectric has a thickness that varies at different positions of the gate electrode.
Claims21
An integrated circuit comprising a transistor in a semiconductor substrate having a main surface, the transistor comprising:
- a source region;
- a drain region;
- a channel region;
- a drift zone;
- a gate electrode;
- and
- a gate dielectric adjacent to the gate electrode,
- wherein the gate electrode is disposed adjacent to at least two sides of the channel region, the channel region and the drift zone are disposed along a first direction parallel to the main surface between the source region and the drain region, and the gate dielectric has a thickness that varies at different positions of the gate electrode.
An integrated circuit comprising a transistor in a semiconductor substrate having a main surface, the transistor comprising:
- a source region;
- a drain region;
- a channel region;
- a drift zone;
- a gate electrode;
- and
- a gate dielectric adjacent to the gate electrode,
- wherein the gate electrode and the gate dielectric are disposed in gate trenches, the gate trenches are disposed adjacent to two sides of the channel region, the channel region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction extends parallel to the main surface, and the gate dielectric has a thickness that varies at different positions of the gate electrode.
A method of manufacturing a semiconductor device comprising forming a transistor in a semiconductor substrate having a main surface, wherein forming the transistor comprises:
- forming a source region;
- forming a drain region;
- forming a channel region;
- forming a drift zone;
- forming a gate electrode adjacent to the channel region;
- and
- forming a gate dielectric adjacent to the gate electrode, the gate electrode being disposed adjacent to at least two sides of the channel region, the channel region and the drift zone being disposed along a first direction parallel to the main surface between the source region and the drain region,
- wherein the gate dielectric is formed so as to have a thickness that varies at different positions of the gate electrode.
Dependencies are inferred from the claim text.