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US 2015/0091081 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorJun Kyo SUH
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate including a plurality of pillars, a gate electrode formed to surround a lower portion of the pillar and having a top surface lower than a top surface of the pillar, a salicide layer formed to cover the top surface of the pillar and surround an upper portion of the pillar, and an electrode formed to cover a top surface and a lateral surface of the salicide layer.
Claims15
A semiconductor device, comprising:
- a semiconductor substrate including a plurality of pillars;
- a gate electrode formed to surround a lower portion of each pillar and having a top surface lower than a top surface of the pillar;
- a self-aligned silicide (salicide) layer formed to cover the top surface of the pillar and surround an upper portion of the pillar;
- and
- an electrode formed to cover a top surface and a lateral surface of the salicide layer.
2 more elements
A method for fabricating a semiconductor device, the method comprising:
- forming a plurality of pillars in the semiconductor substrate;
- forming a conductive material to surround a lower lateral surface of each pillar;
- forming a first spacer to surround a lateral surface of the pillar over the conductive material to expose a top surface and an upper lateral surface of the pillar;
- forming a self-aligned silicide (salicide) layer on the top surface and the upper lateral surface of the pillar;
- and
- forming an electrode to surround the salicide layer.
3 more elements
Dependencies are inferred from the claim text.