Semiconductor device and fabricating method thereof

A semiconductor device comprising:

• a substrate;
• a plurality of lower electrodes formed on the substrate, wherein:
• each lower electrode extends vertically upward away from the substrate,
• first lower electrodes of the plurality of lower electrodes include a bottom cylinder portion at a first height that has vertical walls on all sides and a top cylinder portion at a second height above the first height that also has vertical walls on all sides, and
• second lower electrodes of the plurality of lower electrodes include a bottom cylinder portion at the first height that has vertical walls on all sides and a top cylinder portion at the second height that has vertical walls on at least one side but no walls on at least part of the top cylinder portion;
• a dielectric layer formed on the plurality of lower electrodes;
• and
• an upper electrode formed on the plurality of lower electrodes and on the dielectric layer, wherein:
• the upper electrode includes a first semiconductor compound layer and a second semiconductor compound layer sequentially stacked one on the other, and the first semiconductor compound layer has a crystallinity different from that of the second semiconductor compound layer.

A semiconductor device comprising:

• first storage electrodes and second storage electrodes adjacent to each other and each having a cylinder shape;
• a supporter pattern between the first storage electrodes and the second storage electrodes;
• a dielectric film on the first storage electrodes and the second storage electrodes;
• a recess on a portion of a sidewall of each of the first storage electrodes;
• and
• an upper electrode formed on the dielectric film,
• wherein the upper electrode includes a first semiconductor compound layer formed in the recess and a second semiconductor compound layer formed on the first semiconductor compound layer, and the first semiconductor compound layer and the second semiconductor compound layer have different compositions.

A semiconductor device comprising:

• a storage electrode having a cylinder shape;
• a dielectric film on the storage electrode;
• and
• a plate electrode on the dielectric film,
• wherein the plate electrode includes a first semiconductor compound layer and a second semiconductor compound layer sequentially stacked one on the other, and the first semiconductor compound layer has a crystallinity different from that of the second semiconductor compound layer.