Hybrid phase field effect transistor

An electronic device, comprising:

• a gate electrode on a substrate,
• a pair of source/drain regions on the substrate at opposite sides of the gate electrode;
• a pair of contact layers coupled to the pair of source/drain regions;
• and
• a metal-insulator phase transition material layer formed within at least one of the contact layers.

A method to manufacture an electronic device, comprising:

• depositing a first insulating layer over a transistor structure comprising a gate electrode over a fin on a substrate and a first contact region and a second contact region on the fin at opposite sides of the gate electrode, the fin comprising three sides;
• forming a first trench in the first insulating layer over the first contact region;
• and
• depositing a metal-insulator phase transition material layer in the first trench.