Semiconductor element, semiconductor device, method for manufacturing semiconductor element, and method for manufacturing semiconductor device

A semiconductor device, comprising:

• a substrate including a support unit and a wiring electrode;
• a semiconductor element provided on the support unit and including:
• a first semiconductor layer;
• a second semiconductor layer provided on the first semiconductor layer;
• a first electrode provided on the second semiconductor layer;
• a second electrode provided on the second semiconductor layer;
• a control electrode provided on the second semiconductor layer;
• a pad unit provided on the second semiconductor layer, the pad unit being electrically connected to the control electrode;
• and
• an insulating layer provided on the second semiconductor layer, the insulating layer having an opening on the pad unit;
• and
• a wiring electrically connecting the wiring electrode and the pad unit.

A semiconductor device, comprising:

• a substrate including a support unit and a wiring electrode;
• a semiconductor element provided on the support unit and including:
• a first semiconductor layer;
• a second semiconductor layer provided on the first semiconductor layer;
• a first electrode provided on the second semiconductor layer;
• a second electrode provided on the second semiconductor layer;
• a control electrode provided on the second semiconductor layer;
• a pad unit provided on the second semiconductor layer, the pad unit being electrically connected to the control electrode;
• an insulating layer provided on the second semiconductor layer, the insulating layer having an opening;
• and
• at least one of a conductor and a conductive film, the conductor being provided on the insulating layer and covering at least a part of the opening, the conductive film being provided on the second semiconductor layer inside the opening;
• and
• a wiring electrically connecting the wiring electrode and the pad unit.

A method for manufacturing a semiconductor element, comprising:

• forming a first semiconductor layer on a substrate;
• forming a second semiconductor layer on the first semiconductor layer;
• forming a first electrode and a second electrode on the second semiconductor layer;
• forming a control electrode on the first semiconductor layer;
• forming a pad unit provided on the second semiconductor layer and electrically connected to the control electrode;
• forming an insulating layer having an opening on the first semiconductor layer;
• and
• forming a conductor on the insulating layer, the conductor covering at least a part of the opening.

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor element on a mounting substrate;
• the mounting substrate including a support unit and a wiring electrode, and
• the semiconductor element including:
• a first semiconductor layer;
• a second semiconductor layer provided on the first semiconductor layer;
• a first electrode provided on the second semiconductor layer;
• a second electrode provided on the second semiconductor layer;
• a control electrode provided on the second semiconductor layer;
• a pad unit provided on the second semiconductor layer, the pad unit being electrically connected to the control electrode;
• an insulating layer provided on the second semiconductor layer, the insulating layer having an opening;
• and
• a conductor provided on the insulating layer, the conductor covering at least a part of the opening,
• the semiconductor element being provided on the support unit;
• short-circuiting or insulating an electric connection between the pad unit and the conductor;
• and
• electrically connecting the wiring electrode and the pad unit using a wiring.