Passivation technique for wide bandgap semiconductor devices

Abstract

A method of protecting a semiconductor structure from water and a semiconductor structure formed by the method. The semiconductor structure includes a wide-bandgap semiconductor material in which at least one semiconductor device is formed. The method includes heating the semiconductor structure in a vacuum to a temperature of at least 200° C. to remove water from the semiconductor structure. The method also includes, after the heating of the semiconductor structure, forming a layer comprising a hydrophobic material over the semiconductor structure. The semiconductor structure is kept in the vacuum between the heating of the semiconductor structure and the forming of the layer comprising the hydrophobic material.

Dependencies are inferred from the claim text.