Semiconductor device having high mobility channel

A non-transitory computer-readable medium comprising processor-executable instructions that, when executed by a processor, cause the processor to:

• initiate formation of a semiconductor device, the semiconductor device formed by:
• forming a doped region associated with a source region or a drain region of a semiconductor device;
• and
• forming a high mobility channel within the semiconductor device, wherein the doped region is annealed prior to forming the high mobility channel, wherein the doped region extends from the source region or the drain region toward the high mobility channel, and wherein a portion of a substrate of the semiconductor device is positioned between the doped region and the high mobility channel.

A method comprising:

• receiving design information representing at least one physical property of a semiconductor device, the semiconductor device comprising:
• a high mobility channel between a source region and a drain region, wherein the high mobility channel extends substantially a length of a gate;
• and
• a doped region extending from the source region or the drain region toward the high mobility channel, wherein a portion of a substrate is positioned between the doped region and the high mobility channel;
• transforming the design information to comply with a file format;
• and
• generating a data file including the transformed design information.

A method comprising:

• receiving a data file including design information corresponding to a semiconductor device;
• and
• fabricating the semiconductor device according to the design information, wherein the semiconductor device includes:
• a high mobility channel between a source region and a drain region, wherein the high mobility channel extends substantially a length of a gate;
• and
• a doped region extending from the source region or the drain region toward the high mobility channel, wherein a portion of a substrate is positioned between the doped region and the high mobility channel.

A method comprising:

• receiving, at a computer, design information including physical positioning information of a packaged semiconductor device on a circuit board, the packaged semiconductor device including a semiconductor structure comprising:
• a high mobility channel between a source region and a drain region, wherein the high mobility channel extends substantially a length of a gate;
• and
• a doped region extending from the source region or the drain region toward the high mobility channel, wherein a portion of a substrate is positioned between the doped region and the high mobility channel;
• and
• transforming the design information to generate a data file.

A method comprising:

• receiving a data file including design information including physical positioning information of a packaged semiconductor device on a circuit board;
• and
• manufacturing the circuit board, the circuit board configured to receive the packaged semiconductor device according to the design information, wherein the packaged semiconductor device comprises:
• a high mobility channel between a source region and a drain region, wherein the high mobility channel extends substantially a length of a gate;
• and
• a doped region extending from the source region or the drain region toward the high mobility channel, wherein a portion of a substrate is positioned between the doped region and the high mobility channel.