PROCESS FOR FABRICATING FIN-TYPE FIELD EFFECT TRANSISTOR (FinFET) STRUCTURE AND PRODUCT THEREOF
AssigneeUnited Microelectronics Corp.
InventorsYu-Hsiang Hung, Ssu-I Fu, Chung-Fu Chang, Yen-Liang Wu, Cho-Han Fan, Chien-Ting Lin
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Abstract
A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fm together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer.
Claims21
A process for fabricating a fin-type field effect transistor (FinFET) structure, comprising:
- patterning a semiconductor substrate to form a plurality of fins;
- forming a gate dielectric layer on surfaces of the fins;
- trimming the gate dielectric layer to reduce a thickness thereof;
- and
- forming a spacer material layer on the trimmed gate dielectric layer.
A process for fabricating a FinFET structure, comprising:
- patterning a semiconductor substrate in a first area to form a first fin;
- forming a first spacer on a sidewall of the first fin;
- removing a portion of the first fin, such that the first spacer and a surface of the remaining first fin together define a first cavity;
- and
- forming a piece of a first semiconductor compound from the first cavity, wherein an upper portion of the piece of the first semiconductor compound laterally extends over the first spacer.
A fin-type field effect transistor (FinFET) structure, comprising:
- a first fin over a substrate;
- a first spacer, disposed on a sidewall of the first fin, and extending upward to define, in combination with the first fin, a first cavity;
- and
- a piece of a first semiconductor compound, including a first lower portion in the first cavity, and a first upper portion over the first lower portion and laterally extending over the first spacer.
Dependencies are inferred from the claim text.