Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsRyohei GEJO, Kazutoshi NAKAMURA, Tsuneo OGURA, Tomoko MATSUDAI
Life of this patent
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Abstract
A semiconductor device includes a first region of a first conductivity type, a collector electrode electrically connected to a first side of the first region, first and second gate electrodes and first and second conductor electrodes, each of the gate and conductor electrodes extending into the first region from a second side thereof that is opposite to the first side, an emitter electrode electrically connected to the conductor electrodes, and a second region of the first conductivity type, that is adjacent to the gate electrodes, electrically connected to the emitter electrode, and spaced from the first and second conductor electrodes.
Claims20
A semiconductor device, comprising:
- a first region of a first conductivity type;
- a collector electrode electrically connected to a first side of the first region;
- first and second gate electrodes and first and second conductor electrodes, each of the gate and conductor electrodes extending into the first region from a second side thereof that is opposite to the first side;
- an emitter electrode electrically connected to the conductor electrodes;
- and
- a second region of the first conductivity type, that is adjacent to the gate electrodes, electrically connected to the emitter electrode, and spaced from the first and second conductor electrodes.
A semiconductor device comprising:
- a first semiconductor region;
- a plurality of control and conductive electrodes, each extending into a surface of the first semiconductor region;
- a second semiconductor region on the first semiconductor region;
- a third semiconductor region on the second semiconductor region;
- a fourth semiconductor region between the first semiconductor region and the second semiconductor region;
- a fifth semiconductor region on a side of the first semiconductor region opposite to the second semiconductor region;
- a first electrode electrically connected to the second semiconductor region, the third semiconductor region, and the conductive electrodes;
- and
- a second electrode electrically connected to the fifth semiconductor region,
- wherein the first, third, and fourth semiconductor regions have a first conductivity type and the second and fifth semiconductor regions have a second conductivity type.
Dependencies are inferred from the claim text.