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AssigneeInfineon Technologies AG
InventorsJohannes Georg Laven, Hans-Joachim Schulze, Roman Baburske
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A semiconductor device includes an insulated gate bipolar transistor (IGBT) arrangement. The IGBT arrangement includes a carrier confinement reduction region laterally arranged between a cell region and a sensitive region. The IGBT arrangement is configured or formed so that the cell region has a first average density of free charge carriers in an on-state of the IGBT arrangement, the carrier confinement reduction region has a second average density of free charge carriers in the on-state of the IGBT arrangement and the sensitive region has a third average density of free charge carriers in the on-state of the IGBT arrangement. The first average density of free charge carriers is larger than the second average density of free charge carriers and the second average density of free charge carriers is larger than the third average density of free charge carriers.
A semiconductor device comprising an insulated gate bipolar transistor arrangement, the insulated gate bipolar transistor arrangement comprising a carrier confinement reduction region laterally arranged between a cell region and a sensitive region, wherein the insulated gate bipolar transistor arrangement is configured so that the cell region comprises a first average density of free charge carriers, the carrier confinement reduction region comprises a second average density of free charge carriers and the sensitive region comprises a third average density of free charge carriers in an on-state of the insulated gate bipolar transistor arrangement, wherein the first average density of free charge carriers is larger than the second average density of free charge carriers and the second average density of free charge carriers is larger than the third average density of free charge carriers.
A method for forming a semiconductor device, the method comprising forming an insulated gate bipolar transistor arrangement, the insulated gate bipolar transistor arrangement comprising a carrier confinement reduction region laterally arranged between a cell region and a sensitive region, wherein the insulated gate bipolar transistor arrangement is formed so that the cell region comprises a first average density of free charge carriers, the carrier confinement reduction region comprises a second average density of free charge carriers and the sensitive region comprises a third average density of free charge carriers in an on-state of the insulated gate bipolar transistor arrangement, wherein the first average density of free charge carriers is larger than the second average density of free charge carriers and the second average density of free charge carriers is larger than the third average density of free charge carriers.
Dependencies are inferred from the claim text.