Heterostructure Including Anodic Aluminum Oxide Layer
AssigneeSensor Electronic Technology, Inc.
InventorsMichael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska
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Abstract
A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can be located between a semiconductor layer and another layer of material. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor layer. The layer of material can penetrate at least some of the plurality of pores and directly contact the semiconductor layer. In an illustrative embodiment, the layer of material is a conductive material and the anodic aluminum oxide is located at a p-type contact.
Claims20
A semiconductor structure comprising:
- a first semiconductor layer;
- an anodic aluminum oxide layer immediately adjacent to the first semiconductor layer, wherein the anodic aluminum oxide layer includes a plurality of pores extending to an adjacent surface of the first semiconductor layer;
- and
- a layer of material immediately adjacent to the anodic aluminum oxide layer, wherein the layer of material penetrates at least some of the plurality of pores and directly contacts the first semiconductor layer.
An optoelectronic device comprising:
- an active region;
- a p-type layer located on a first side of the active region;
- an anodic aluminum oxide layer located directly on the p-type layer, wherein the anodic aluminum oxide layer includes a plurality of pores;
- and
- a p-type contact located on the anodic aluminum oxide layer, wherein the p-type contact is formed of a conductive material and the conductive material penetrates at least some of the plurality of pores and directly contacts the p-type layer.
A method of fabricating a semiconductor structure, the method comprising:
- forming a first semiconductor layer;
- forming an anodic aluminum oxide layer immediately adjacent to the first semiconductor layer, wherein the anodic aluminum oxide layer includes a plurality of pores extending to an adjacent surface of the first semiconductor layer;
- and
- forming a layer of material immediately adjacent to the anodic aluminum oxide layer, wherein the layer of material penetrates at least some of the plurality of pores and directly contacts the first semiconductor layer.
Dependencies are inferred from the claim text.