Semiconductor light emitting device and semiconductor light emitting apparatus including the same

A semiconductor light emitting device, comprising:

• a substrate;
• a light emitting structure and a zener structure spaced apart from each other on the substrate and respectively including a plurality of first semiconductor layers and a plurality of second semiconductor layers;
• and
• a zener electrode unit including a first electrode and a second electrode on the zener structure,
• wherein the zener structure includes a mesa region including at least a portion of the plurality of first semiconductor layers, and the first electrode is spaced apart from the mesa region to encompass the mesa region.

A semiconductor light emitting device, comprising:

• a substrate;
• a first structure disposed on the substrate and including a first first-conductive-type semiconductor layer, a first active layer, and a first second-conductive-type semiconductor layer;
• a second structure disposed to be spaced apart from the first structure on the substrate and including a second first-conductive-type semiconductor layer, a second active layer and a second second-conductive-type semiconductor layer;
• and
• a first first-conductive-type electrode and a first second-conductive-type electrode connected to the first first-conductive-type semiconductor layer and the first second-conductive-type semiconductor layer, respectively;
• and
• a second first-conductive-type electrode and a second second-conductive-type electrode connected to the second first-conductive-type semiconductor layer and the second second-conductive-type semiconductor layer, respectively,
• wherein the second first-conductive-type electrode is spaced apart from the second active layer so as to encompass the second active layer.