Light emitting diode
AssigneeGwangju Institute of Science and Technology
InventorsSeong-Ju PARK, Jae-Joon KIM, Youngchul LEEM
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Abstract
Disclosed herein is a light emitting diode. The light emitting diode includes a substrate, an n-type semiconductor layer placed on the substrate, an active layer placed on the n-type semiconductor layer, a p-type semiconductor layer placed on the active layer, a reflective layer placed on the p-type semiconductor layer, an n-type electrode electrically connected to the n-type semiconductor layer, a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer, and separated from the p-type electrode. The light emitting diode can provide improved internal quantum efficiency using the patterned magnetic structure.
Claims12
A light emitting diode comprising:
- a substrate;
- an n-type semiconductor layer placed on the substrate;
- an active layer placed on the n-type semiconductor layer;
- a p-type semiconductor layer placed on the active layer;
- a reflective layer placed on the p-type semiconductor layer;
- an n-type electrode electrically connected to the n-type semiconductor layer;
- a p-type electrode placed on the reflective layer;
- and
- a first patterned magnetic structure placed on the reflective layer and separated from the p-type electrode.
A light emitting diode comprising:
- a support substrate;
- a first patterned magnetic structure placed on the support substrate;
- a p-type electrode placed on the support substrate exposed between patterns of the first patterned magnetic structure;
- a reflective layer placed on the first patterned magnetic structure and the p-type electrode;
- a p-type semiconductor layer placed on the reflective layer;
- an active layer placed on the p-type semiconductor layer;
- an n-type semiconductor layer placed on the active layer;
- and
- an n-type electrode electrically connected to the n-type semiconductor layer.
Dependencies are inferred from the claim text.