Semiconductor Device and Method of Manufacturing
AssigneeNXP B.V.
InventorsTim Boettcher, Jan Fischer
Life of this patent
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Abstract
A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.
Claims15
A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.
A method of making a reduced surface field effect trench structure for a diode, the method comprising:
- forming at least two trenches in a substrate separated from one another by a joining region of the substrate;
- and
- forming an electrical contact and a layer of p-doped semiconductor material at the joining region.
Dependencies are inferred from the claim text.