Semiconductor Device and Method of Manufacturing the Same

A semiconductor device comprising:

• a semiconductor substrate, on which a first semiconductor region having a first conductivity type is locally formed on a surface of a second semiconductor layer having a second conductivity type opposite to the first conductivity type;
• a main electrode, which is provided on a surface of the semiconductor substrate and which is connected to the first semiconductor region and the second semiconductor layer such that a pn-junction diode is formed with the first semiconductor region and a Schottky barrier diode is formed with the second semiconductor layer;
• a first electrode configured to ohmic-contact the first semiconductor region;
• a second electrode configured to Schottky-contact the second semiconductor layer and not having a portion directly contacting the first electrode;
• and
• a conductive reaction suppression layer configured to contact the first electrode and the second electrode and to suppress a reaction between a material configuring the first electrode and a material configuring the second electrode are provided on the surface of the semiconductor substrate,
• wherein the main electrode is electrically connected to the first electrode and the second electrode.