White led chip and white led packaging device

A white LED packaging device, comprising:

• a white LED chip comprising;
• a substrate;
• a P-type layer formed on a first surface of the substrate;
• a tunneling structure disposed over the P-type layer, wherein the tunneling stucture comprises a first barrier layer, an active layer and a second barrier layer, wherein the first barrier layer comprises a first material layer, the active layer comprises a second material layer, and the second barrier layer comprises a third material layer;
• an N-type layer disposed over the tunneling structure;
• an N-type electrode in contact with the N-type layer;
• and
• a P-type electrode in contact with the P-type layer, and
• a flip chip package structure comprising:
• a submount;
• a first bonding pad electrically connected with the P-type electrode;
• and
• a second bonding pad electrically connected with the N-type electrode,
• wherein an energy gap of the second material layer is lower than an energy gap of the first material layer and an energy gap of the third material layer, wherein each of the first material layer, the second material layer and the third material layer is a metal oxide layer, a metal nitride layer or a metal oxynitride layer.

A white LED chip, comprising:

• a P-type layer;
• a tunneling structure disposed over the P-type layer, wherein the tunneling structure comprises plural material layers;
• an N-type layer disposed over the tunneling structure;
• an N-type electrode in contact with the N-type layer;
• and
• a P-type electrode in contact with the P-type layer,
• wherein a first material layer of the plural material layers is a metal oxide layer, a metal nitride layer or a metal oxynitride layer.