Display Device and Method of Manufacturing the Same

A method of manufacturing a display device, the method comprising the steps of:

• sequentially forming a first material layer for forming a semiconductor layer and a source/drain electrode layer on a surface of a substrate having a gate electrode and a gate insulating film;
• simultaneously patterning the first material layer and the source/drain electrode layer to form a first pattern in a thin film transistor region and to form a second pattern in a data pad region, the first pattern comprising a first portion of the semiconductor layer and a first portion of the source/drain electrode layer, and the second pattern comprising a second portion of the semiconductor layer and a data pad formed from a second portion of the source/drain electrode layer;
• sequentially forming first and second passivation films structured such that a first hole exists through the first and second passivation films through which at least a part of the first portion of the source/drain electrode layer is exposed, and such that a second hole exists through the first and second passivation films through which at least a part of the data pad is exposed;
• sequentially forming a second material layer and a third material layer on the second passivation film;
• forming a sensing line pattern, a pixel electrode pattern, and a connection electrode pattern connected with the data pad by patterning the second and third material layers through a patterning process using a half tone mask;
• forming a third passivation film on the sensing line pattern, the pixel electrode pattern, and the connection electrode pattern;
• and
• forming a common electrode connected with the sensing line and forming a data pad electrode connected with the connection electrode on the third passivation film.

A display device comprising:

• a thin film transistor formed in a pixel region comprising a gate line and a data line crossing the gate line, the thin film transistor comprising a gate electrode, a semiconductor layer, a source electrode, and a drain electrode;
• a data pad in a data pad region connected with one end of the data line;
• a first passivation film formed on the thin film transistor and the data pad;
• a second passivation film formed on the first passivation film, the second passivation film having a first portion in the data pad region and a second portion in the pixel region, the second portion having a greater thickness than the first portion;
• a pixel electrode formed on the second passivation film and connected with the drain electrode via a first hole through the first and second passivation films;
• one or more connection electrodes formed on the second passivation film and connected with the data pad via a second hole through the first and second passivation films;
• and
• a data pad electrode connected with the data pad through the one or more connection electrodes.