Display Device and Method of Manufacturing the Same

A method of manufacturing a display device, the method comprising:

• sequentially forming a first material layer for forming a semiconductor layer and a source/drain electrode layer on a surface of a substrate on which a gate electrode and a gate insulating film are formed;
• simultaneously patterning the first material layer and the source/drain electrode layer to form a first pattern in a thin film transistor region and to form a second pattern in a data pad region, the first pattern comprising a first portion of the semiconductor layer and a first portion of the source/drain electrode layer, and the second pattern comprising a second portion of the semiconductor layer and a data pad formed from a second portion of the source/drain electrode layer;
• sequentially forming first and second passivation films structured such that a hole exists through the first and second passivation films through which at least a part of the source/drain electrode layer is exposed in the thin film transistor region including the first pattern;
• sequentially forming a second material layer and a third material layer on the second passivation film;
• forming a sensing line pattern, a pixel electrode pattern, and a connection electrode pattern connected with the data pad by patterning the second and third material layers through a patterning process using a half tone mask;
• forming a third passivation film on the sensing line pattern, the pixel electrode pattern, and the connection electrode pattern;
• and
• forming a common electrode connected with the sensing line pattern and forming a data pad electrode connected with the connection electrode pattern on the third passivation film.

A display device comprising:

• a thin film transistor formed in a pixel region comprising a gate line and a data line crossing the gate line, the thin film transistor comprising a gate electrode, a semiconductor layer, a source electrode, and a drain electrode;
• a first passivation film formed on the thin film transistor;
• a second passivation film formed on the first passivation film, the first and second passivation films structured such that a hole exists through the first and second passivation films;
• a pixel electrode formed on the second passivation film and the drain electrode and at least partially filling the hole through the first and second passivation films, the pixel electrode connected with the drain electrode via the hole through the first and second passivation films;
• a sensing line formed on the second passivation film;
• a common electrode connected with the sensing line;
• a data pad connected with one end of the data line;
• and
• a data pad electrode formed of a same material as the common electrode, the data pad electrode connected with the data pad.