Thin Film Transistor Substrate Having Metal Oxide Semiconductor and Method for Manufacturing the Same

A thin film transistor substrate, comprising:

• a gate electrode formed on a substrate;
• a gate insulating layer covering first portions of the gate electrode and exposing second portions of the gate electrode;
• a semiconductor active layer overlapping with the first portions of the gate electrode on the gate insulating layer;
• a gate line contacting the second portions of the gate electrode and running in a horizontal direction on the substrate;
• an intermediate insulating layer exposing middle portions of the semiconductor active layer and covering the gate line and the gate electrode;
• a data line running in a vertical direction on the substrate on the intermediate insulating layer;
• a source electrode branching from the data line and contacting a side of the semiconductor active layer;
• and
• a drain electrode facing the source electrode, separated by a predetermined distance from the source electrode, and contacting another side of the semiconductor active layer.