Solid-state imaging device and method of manufacturing the device
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsJunji HIRASE, Yoshiyuki MATSUNAGA, Yoshihiro SATO
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Abstract
Each unit pixel includes a photoelectric converter formed above a semiconductor region, an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter, a reset transistor configured to reset a potential of the gate electrode, and an isolation region formed in the semiconductor region between the amplifier transistor and the reset transistor to electrically isolate the amplifier transistor from the reset transistor. The amplifier transistor includes a source/drain region. The source/drain region has a single source/drain structure.
Claims19
A solid-state imaging device comprising:
- a semiconductor region of a first conductivity type;
- and
- a plurality of unit pixels arranged in the semiconductor region, wherein each of the unit pixels includes
- a photoelectric converter formed above the semiconductor region,
- an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter,
- a reset transistor formed in the semiconductor region, and configured to reset a potential of the gate electrode of the amplifier transistor, and
- an isolation region formed in the semiconductor region between the amplifier transistor and the reset transistor to electrically isolate the amplifier transistor from the reset transistor,
- the isolation region is made of a material forming the semiconductor region,
- the amplifier transistor includes a source/drain region of a second conductivity type, and
- the source/drain region has a single source/drain structure.
A solid-state imaging device comprising:
- a plurality of unit pixels arranged in a semiconductor region of a first conductivity type;
- and
- a peripheral circuit located in a peripheral region of the plurality of unit pixels, and including a plurality of peripheral transistors, wherein
- each of the unit pixels includes
- a photoelectric converter formed above the semiconductor region,
- an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter, and
- a reset transistor formed in the semiconductor region, and configured to reset a potential of the gate electrode of the amplifier transistor, and
- the transistors of the unit pixels in the semiconductor region are isolated by an impurity diffusion layer, and
- the transistors of the peripheral circuit are isolated by an insulating film.
A method of manufacturing a solid-state imaging device comprising:
- sequentially forming a gate insulating film and a silicon film on a semiconductor region;
- selectively implanting impurities into a pixel formation region of the formed silicon film;
- forming a first gate electrode from the silicon film of the pixel formation region;
- forming a first source/drain region in the pixel formation region of the semiconductor region using the first gate electrode as a mask, the first source/drain region containing impurities at a first concentration;
- forming a second gate electrode from the silicon film of a peripheral circuit formation region in the semiconductor region;
- and
- forming a second source/drain region in the peripheral circuit formation region of the semiconductor region using the second gate electrode as a mask, the second source/drain region containing impurities at a second concentration higher than the first concentration, wherein
- the first source/drain region has a single source/drain structure.
Dependencies are inferred from the claim text.