SiC Coating In An Ion Implanter
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsRobert J. Mason, Shardul S. Patel, Robert H. Bettencourt, Timothy J. Miller
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Abstract
An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.
Claims15
An ion implanter, comprising:
- an ion source comprising an ion source chamber having a first wall, an opposite conductive second wall and a plurality of conductive side walls, where an extraction aperture is disposed in said second wall;
- and
- an extraction electrode assembly disposed proximate said extraction aperture and outside said ion source chamber, said extraction electrode assembly comprising one or more conductive electrodes;
- wherein at least one conductive component is coated with low resistivity silicon carbide.
An ion implanter, comprising:
- an ion source comprising an ion source chamber having a first wall, an opposite conductive second wall and a plurality of conductive side walls, where an extraction aperture is disposed in said second wall;
- a plurality of conductive liners, each disposed against and in electrically communication with a respective interior surface of said conductive side walls;
- and
- an extraction electrode assembly disposed proximate said extraction aperture and outside said ion source chamber, said extraction electrode assembly comprising one or more conductive electrodes;
- wherein at least one of said conductive liners, an interior surface of said second wall and said extraction electrode assembly is coated with low resistivity silicon carbide.
An ion implanter, comprising:
- an ion source comprising an ion source chamber having a first wall, an opposite conductive second wall and a plurality of conductive side walls, where an extraction aperture is disposed in said second wall;
- a plurality of conductive graphite liners, each disposed against and in electrically communication with a respective interior surface of said conductive side walls, each of said liners comprising a first surface facing an interior of said ion source chamber and an opposite second surface facing a respective sidewall, wherein said first surface is coated with low resistivity silicon carbide;
- and
- an extraction electrode assembly disposed proximate said extraction aperture and outside said ion source chamber, said extraction electrode assembly comprising one or more conductive electrodes, each having a respective aperture, wherein a portion of each electrode surrounding said respective aperture is coated with low resistivity silicon carbide;
- wherein said low resistivity silicon carbide has a resistivity of less than 1 ohm-cm.
Dependencies are inferred from the claim text.