Plasma processing apparatus and plasma processing method
AssigneeTokyo Electron Limited
InventorsYasuharu SASAKI, Akihito FUSHIMI, Manabu IWATA
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Abstract
A plasma processing apparatus and a plasma processing method are provided which can sufficiently suppress an abnormal discharge in a gas space. A plasma processing apparatus includes a high frequency power source connected between a processing chamber and a base stand; a gas storage unit provided within the base stand and configured to store a gas; a blocking mechanism configured to block a gas introducing port of the gas storage unit; and a connection unit configured to connect a space between a disposition position of a wafer and the base stand, to the gas storage unit.
Claims4
A plasma processing apparatus comprising:
- a high frequency power source connected between a reference electrode and a base stand;
- a gas storage unit provided within the base stand and configured to store a gas;
- a blocking mechanism configured to block a gas introducing port of the gas storage unit;
- and
- a connection unit configured to connect a space between a disposition position of a substrate and the base stand, to the gas storage unit.
A plasma processing method comprising:
- introducing a gas into a gas storage unit when a high frequency voltage is not applied between a reference electrode and a base stand by a high frequency power source, the gas storage unit being provided within the base stand and connected to a space between a disposition position of a substrate and the base stand, and
- blocking a gas introducing port of the gas storage unit when the high frequency voltage is applied between the reference electrode and the base stand by the high frequency power source.
Dependencies are inferred from the claim text.