Enhanced porosification
AssigneeSunPower Corporation
InventorsJoseph Behnke, Seung Bum Rim
Life of this patent
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Abstract
Forming a porous layer on a silicon substrate. Forming the porous layer can include placing a first silicon substrate in a solution, where a first electrode is within a threshold distance to an edge of the silicon substrate. It can further include conducting a first current through the silicon substrate, where the first electrode can be positioned relative to the edge allowing for substantially uniform porosification along the edge of the first silicon substrate.
Claims20
A method for forming a porous layer on a silicon substrate, the method comprising:
- placing a first silicon substrate in a solution, wherein a first electrode is within a threshold distance of a first edge of the first silicon substrate;
- and
- conducting a first current through the first silicon substrate, wherein the first electrode's position being within the threshold distance of the first edge allows for substantially uniform porosification along the first edge of the first silicon substrate.
A method of forming a porous layer on a silicon substrate, the method comprising:
- placing a first silicon substrate in a solution, the first silicon substrate positioned between a second and third electrode, wherein a first electrode is positioned along a first perimeter edge of the first silicon substrate;
- and
- conducting a first current from the second electrode to the third electrode through the first silicon substrate, wherein placement of the first electrode relative to the first perimeter edge allows for substantially uniform porosification along the first perimeter edge of the first silicon substrate.
A method of forming a porous layer on a silicon substrate, the method comprising:
- placing a first silicon substrate in a solution, the first silicon substrate positioned between a second and third electrode, wherein a first electrode is physically separated from the solution by a cationic membrane and at least partially surrounds perimeter edges of the first silicon substrate;
- and
- conducting a first current from the second electrode to the third electrode through the first silicon substrate, wherein placement of the first electrode relative to the perimeter edges allows for substantially uniform porosification along the perimeter edges of the first silicon substrate.
Dependencies are inferred from the claim text.