# US 2015/0090331 A1 · Thin-film photovoltaic cell structure with a mirror layer

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- Number: US 2015/0090331 A1
- Document ID: US20150090331A1
- Status: Published application
- Kind: A1
- Application number: 14/389,270
- Filed: 2013-03-28
- Published: 2015-04-02
- Earliest claimed: 2012-03-29
- Assignees: Centre National de la Recherche Scientifique (CNRS); Electricite de France
- Applicants: Centre National De La Recherche Scientifique-Cnrs; Electricite De France
- Inventors: Negar Naghavi; Zacharie Jehl; Daniel Lincot; Jean-Francois Guillemoles
- Web page: https://patentgrep.com/patent/US20150090331A1

## CPC

- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 10/167: comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
- H10F 77/1694: {the films including Group I-III-VI materials, e.g. CIS or CIGS}
- H10F 77/1699: {the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils}
- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- Y02E 10/52: PV systems with concentrators
- Y02E 10/541: CuInSe2 material PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Thin-layer photovoltaic cell structure with mirror layer. The invention relates to a photovoltaic cell structure intended for solar panel applications. The thin layer photovoltaic cell structure comprises at least one I-III-VI2 alloy layer (CIGS) with photovoltaic properties for the conversion of illuminating light into electricity. In particular, the structure comprises at least: one mirror layer (MR) comprising a surface reflecting (FR) a part of the illuminating light, where said reflecting surface (FR) is facing a first face (F1) of the I-III-VI2 alloy layer for receiving reflected illuminating light on said first face; and one or more first layers (CA, ENC) transparent to the illuminating light for receiving transmitted illuminating light on a second face (F2) of the I-III-VI2 alloy layer opposite to the first face (F1).

## Claims

### Claim 1

Thin layer photovoltaic cell structure comprising at least one I-III-VI2 alloy layer (CIGS) with photovoltaic properties for the conversion of illuminating light into electricity,
characterized in that said structure comprises at least:
one mirror layer (MR) comprising a surface (FR) reflecting a part of the illuminating light, where said reflecting surface (FR) is facing a first face (F1) of the I-III-VI2 alloy layer for receiving reflected illuminating light on said first face; and
one or more first layers (CA, ENC) transparent to the illuminating light for receiving transmitted illuminating light on a second face (F2) of the I-III-VI2 alloy layer opposite to the first face (F1).

### Claim 2 (depends on 1)

Photovoltaic cell structure according to claim 1, characterized in that said mirror layer (MR) is a conducting metal layer.

### Claim 3 (depends on 1)

Photovoltaic cell structure according to claim 1, characterized in that said mirror layer (MR) is nonmetallic and diffusive, and includes a reflective coating.

### Claim 4 (depends on 1)

Photovoltaic cell structure according to claim 1, characterized in that the reflecting surface (FR) of the mirror layer (MR) is across from the first face (F1) of the I-III-VI2 alloy layer (CIGS), with one or more intermediate second layers (CT, C5) transparent to said illuminating light, of which at least one (C5) is transparent and electrically conducting.

### Claim 5 (depends on 1)

Photovoltaic cell structure according to claim 1, characterized in that the one or more transparent first layers (CA, ENC) comprises at least one surface coating for encapsulation.

### Claim 6 (depends on 1)

Photovoltaic cell structure according to claim 1, characterized in that the one or more transparent first layers (CA, ENC) comprise at least one conducting layer, playing the role of a photovoltaic cell electrode.

### Claim 7 (depends on 1)

Photovoltaic cell structure according to claim 1, characterized in that it comprises a transparent and low resistance ohmic contact intermediate layer (CI) between said conducting transparent layer (CA) and said I-III-VI2 alloy layer (CIGS).

### Claim 8 (depends on 1)

Photovoltaic cell structure according to claim 1, characterized in that said I-III-VI2 alloy layer (CIGS) is less than or equal to 0.5 μm thick.

### Claim 9 (depends on 1)

Photovoltaic cell structure according to claim 1, characterized in that it comprises means for incorporation in a solar panel, where said illuminating light is sunlight.

### Claim 10 (depends on 1)

Photovoltaic cell structure according to claim 1, characterized in that it additionally comprises a substrate (S) for said:
I-III-VI2 alloy layer (CIGS),
mirror layer (MR), and
one or more first transparent layers (CA, ENC),
said substrate can be made of a material having a melting point less than or equal to 500° C.

### Claim 11 (depends on 10)

Photovoltaic cell structure according to claim 10, characterized in that said substrate (S) is made of a polymer with melting point below 300° C.

### Claim 12 (depends on 10)

Photovoltaic cells structure according to claim 10, characterized in that said substrate (S) is in contact with the mirror layer (MR) on a face (FO) opposite to said reflecting surface (FR).

### Claim 13 (depends on 1)

Photovoltaic cell manufacturing process comprising a structure according to claim 1, characterized in that the process includes at least the steps:
a) deposit (S1) of the I-III-VI2 alloy layer (CIGS) on a surface, where said second face (F2) of the I-III-VI2 alloy layer is in contact with said surface,
b) deposit (S3) of the mirror layer (MR) directly or indirectly on said first face (F1) of the I-III-VI2 alloy layer (CIGS), opposite to the second face (F2),
c) deposit (S5) of said one or more first transparent layers (CA, ENC) directly or indirectly on said second face (F2) of the I-III-VI2 alloy layer (CIGS).

### Claim 14 (depends on 13)

Process according to claim 13, characterized in that it additionally comprises a debonding (S4) of at least the I-III-VI2 alloy layer (CIGS) from said surface by the second face (F2), before step c).

### Claim 15 (depends on 13)

Process according to claim 13, characterized in that it additionally comprises the deposit (S2) of one or more second thin layers (CT, C5) which are transparent to said illuminating light, between steps a) and b), on the first face (F1) of the I-III-VI2 alloy layer (CIGS), where the mirror layer (MR) is deposited on one of said transparent second thin layers (CT, C5).