Hybrid-core through holes and vias
AssigneeIntel Corporation
InventorsMIHIR K. ROY, ISLAM A. SALAMA, YONGGANG LI
Life of this patent
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Abstract
A semiconductor device substrate includes a front section and back section that are laminated cores disposed on a front- and back surfaces of a first core. The first core has a cylindrical plated through hole that has been metal plated and filled with air-core material. The front- and back sections have laser-drilled tapered vias that are filled with conductive material and that are coupled to the plated through hole. The back section includes an integral inductor coil that communicates to the front section. The first core and the laminated-cores form a hybrid-core semiconductor device substrate with an integral inductor coil.
Claims10
A process of forming a semiconductor device substrate comprising:
- drilling a through hole in a first core that has a front surface and a back surface;
- forming a plated through hole (PTH) in the through hole;
- forming front- and back through hole bond pads on the PTH;
- and
- laminating at least one laminate-core layer to the first core, wherein each laminated-core layer includes at least one front- and back tapered via that is filled into a laser-drilled via, wherein each laminated-core layer includes a corresponding tapered-via conductive pad, and wherein the tapered vias are coupled to the front- and back through hole bond pads on the PTH.
Dependencies are inferred from the claim text.