Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer readable recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsKoei KURIBAYASHI, Shinya EBATA
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Abstract
Provided is a technique of efficiently purging source gases remaining on a substrate and improving in-plane uniformity of a substrate. A method of processing a substrate includes forming a thin film on a substrate accommodated in a process chamber by (a) supplying a source gas into the process chamber, and (b) supplying an inert gas into the process chamber while alternately increasing and decreasing a flow rate of the inert gas supplied into the process chamber and exhausting the source gas and the inert gas from the process chamber.
Claims14
A method of manufacturing a semiconductor device, the method comprising forming a thin film on a substrate accommodated in a process chamber by (a) supplying a source gas into the process chamber, and (b) supplying an inert gas into the process chamber while alternately increasing and decreasing a flow rate of the inert gas supplied into the process chamber and exhausting the source gas and the inert gas from the process chamber.
A substrate processing apparatus comprising:
- a process chamber configured to process a substrate;
- a source gas supply system configured to supply a source gas into the process chamber;
- an inert gas supply system configured to supply an inert gas into the process chamber;
- and
- a controller configured to control the source gas supply system and the inert gas supply system to supply the inert gas into the process chamber while alternately increasing and decreasing a flow rate of the inert gas supplied into the process chamber and exhaust the source gas and the inert gas from the process chamber after supplying the source gas into the process chamber.
A non-transitory computer readable recording medium causing a computer to perform, to form a thin film on a substrate accommodated in a process chamber:
- (a) supplying a source gas into the process chamber;
- and (b) supplying an inert gas into the process chamber while alternately increasing and decreasing a flow rate of the inert gas supplied into the process chamber and exhausting the source gas and the inert gas from the process chamber.
Dependencies are inferred from the claim text.