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US 2015/0087156 A1Published application
Etching method, and method of producing semiconductor substrate product and semiconductor device using the same, as well as kit for preparation of etching liquid
AssigneeFUJIFILM Corporation
InventorsTetsuya KAMIMURA, Tadashi INABA, Naotsugu MURO, Yoshinori NISHIWAKI
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Abstract
A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.
Claims22
A method of etching a semiconductor substrate, comprising the steps of:
- preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent;
- and then
- applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.
A kit for preparation of an etching liquid, comprising:
- a first liquid and a second liquid in combination, the first liquid containing a basic compound, the second liquid containing an oxidizing agent,
- wherein the etching liquid can be prepared by mixing at least the first liquid with the second liquid, and the etching liquid is on a timely basis to be applied to a semiconductor substrate for etching a Ti-containing layer provided in or on the substrate.
Dependencies are inferred from the claim text.