Methods of Forming Through Substrate Interconnects
AssigneeMicron Technology, Inc.
InventorsDave Pratt, Andy Perkins
Life of this patent
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Abstract
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.
Claims11
1-5. (canceled)
A method of forming a through substrate interconnect sequentially comprising:
- forming a via into semiconductive material of a semiconductor substrate comprising first and second major sides, the via being formed from the first major side to a conductive bondpad received more proximate the second major side than the first major side;
- applying a liquid dielectric to line at least an elevationally outermost portion of sidewalls of the via relative the first major side;
- solidifying the liquid dielectric within the via;
- and
- forming conductive material within the via over the solidified dielectric and forming a through substrate interconnect with the conductive material.
The method of claim 1 wherein the applying is conducted in multiple separate liquid dielectric application steps.
11-35. (canceled)
Dependencies are inferred from the claim text.