Apparatus and method of manufacturing metal gate semiconductor device

A method of manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate;
• forming a gate structure over the substrate, the gate structure including a first spacer and a second spacer;
• forming a trench between the first spacer and the second spacer;
• filling the trench with a metal layer;
• performing a chemical mechanical polishing (CMP) to remove a portion of the metal layer and form a metal gate thereby exposing a top surface of an inter layer dielectric (ILD);
• heating a top surface of the metal gate and the top surface of the ILD;
• and
• forming an etch stop layer over the metal gate and the ILD.

An apparatus of manufacturing a semiconductor device, comprising:

• a semiconductor wafer polish module configured to remove a metal material from a top surface of a semiconductor wafer;
• a clean module arranged to clean the semiconductor wafer after being polished in the semiconductor wafer polish module;
• and
• a heating module configured for heating the top surface of the semiconductor wafer.