Film forming method, film forming device, and film forming system
AssigneeTokyo Electron Limited
InventorsToshihisa Nozawa, Hirokazu Ueda
Life of this patent
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Abstract
A film forming method according to an embodiment includes: (a) a step of supplying a first precursor gas of a semiconductor material into a processing vessel in which a processing target substrate is disposed, the first precursor gas being adsorbed onto the processing target substrate during the step; (b) a step of supplying a second precursor gas of a dopant material into the processing vessel, the second precursor gas being adsorbed onto the processing target substrate during the step; and (c) a step of generating the plasma of a reaction gas in the processing vessel, a plasma treatment being performed during the step so as to modify a layer adsorbed onto the processing target substrate.
Claims20
A film forming method comprising:
- a step of supplying a first precursor gas of a semiconductor material into a processing vessel in which a processing target substrate is disposed so that the first precursor gas is adsorbed onto the processing target substrate;
- a step of supplying a second precursor gas of a dopant material into the processing vessel so that the second precursor gas is adsorbed onto the processing target substrate;
- and
- a step of generating plasma of a reaction gas within the processing vessel so that a plasma treatment is performed so as to modify a layer adsorbed onto the processing target substrate.
A film forming device comprising:
- a processing vessel in which a processing target substrate is disposed;
- a supply section configured to supply a first precursor gas of a semiconductor material, and a second precursor gas of a dopant material into the processing vessel so that the first precursor gas and the second precursor gas are adsorbed onto the processing target substrate;
- and
- a plasma generation section configured to generate plasma of a reaction gas in the processing vessel so as to modify a layer adsorbed onto the processing target substrate by a plasma treatment.
Dependencies are inferred from the claim text.