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US 2015/0087129 A1Published application
Method for Producing Semiconductor Regions Including Impurities
AssigneeInfineon Technologies Austria AG
InventorsJens Peter Konrath, Ronny Kern, Hans-Joachim Schulze
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Abstract
A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench. The trench is extended deeper into the semiconductor body, thereby forming a deeper trench. Impurity atoms are implanted into a bottom of the deeper trench.
Claims21
A method, comprising:
- forming a trench in a first surface of a semiconductor body;
- implanting impurity atoms into a bottom of the trench to form a first implant region;
- extending the trench deeper into the semiconductor body, thereby forming a deeper trench;
- implanting impurity atoms into a bottom of the deeper trench to form a further implant region;
- and;
- after forming the further implant region, annealing the first implant region and the further implant region to diffuse impurity atoms from the first implant region and the further implant region into the semiconductor body.
3 more elements
(canceled)
A method, comprising:
- forming a trench in a first surface of a semiconductor body;
- implanting impurity atoms into a bottom of the trench;
- extending the trench deeper into the semiconductor body, thereby forming a deeper trench;
- implanting impurity atoms into a bottom of the deeper trench;
- and
- forming a scattering layer on at least one of the bottom of the trench and the bottom of the deeper trench without forming the scattering layer on sidewalls of these trenches,
- wherein at least one of implanting impurity atoms into the bottom of the trench and implanting impurity atoms into the bottom of the deeper trench comprises implanting the respective impurity atoms into the scattering layer.
4 more elements
A method, comprising:
- forming a trench in a first surface of a semiconductor body;
- implanting dopant atoms into a bottom of the trench to form a first implant region;
- extending the trench deeper into the semiconductor body, thereby forming a deeper trench;
- implanting dopant atoms into a bottom of the deeper trench to form a further implant region;
- and
- after forming the further implant region, annealing the first implant region and the second implant region to diffuse dopant atoms from the first implant region and the further implant region into the semiconductor body, and to activate the dopant atoms.
3 more elements
Dependencies are inferred from the claim text.