US 2015/0087116 A1 · SAWTOOTH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR POWER SEMICONDUCTOR DEVICES

Abstract

This invention discloses a semiconductor power device formed in a semiconductor substrate includes rows of multiple horizontal columns of thin layers of alternate conductivity types in a drift region of the semiconductor substrate where each of the thin layers having a thickness to enable a punch through the thin layers when the semiconductor power device is turned on. In a specific embodiment the thickness of the thin layers satisfying charge balance equation q*ND*WN=q*NA*WP and a punch through condition of WP<2*WD*[ND/(NA+ND)] where ND and WN represent the doping concentration and the thickness of the N type layers 160, while NA and WP represent the doping concentration and thickness of the P type layers; WD represents the depletion width; and q represents an electron charge, which cancel out. This device allows for a near ideal rectangular electric field profile at breakdown voltage with sawtooth like ridges.

Claims14

Dependent claims

A method for manufacturing a semiconductor power device in a semiconductor substrate with a drift region comprising:

implanting and forming multiple rows of horizontal slices of continuous thin layers of alternate P-type and N-type doped layers extending continuously and horizontally in said drift region of the semiconductor substrate by manufacturing each of the continuous thin layers having a doping and thickness to enable charge balance and punch through said alternated doped layers during a conduction mode in conducting a current in a vertical direction perpendicular to and cross over the horizontal slices of the P-doped and N-doped layers

Dependencies are inferred from the claim text.

Sawtooth electric field drift region structure for power semiconductor devices

Life of this patent

Sawtooth electric field drift region structure for power semiconductor devices

Life of this patent

Abstract

Claims14