Manufacturing method of the semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
Life of this patent
Estimating the term…
Abstract
The semiconductor device is manufactured through the following steps: after first heat treatment is performed on an oxide semiconductor film, the oxide semiconductor film is processed to form an oxide semiconductor layer; immediately after that, side walls of the oxide semiconductor layer are covered with an insulating oxide; and in second heat treatment, the side surfaces of the oxide semiconductor layer are prevented from being exposed to a vacuum and defects (oxygen deficiency) in the oxide semiconductor layer are reduced.
Claims20
(canceled)
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating film over a substrate;
- forming an oxide semiconductor film over and in contact with the first insulating film;
- performing a first heat treatment to the oxide semiconductor film;
- patterning the oxide semiconductor film after performing the first heat treatment to form an oxide semiconductor layer that includes a region comprising c-axis-aligned crystalline oxide semiconductor that is a non-single-crystal oxide material;
- forming a second insulating film covering the oxide semiconductor layer;
- and
- performing a second heat treatment to the oxide semiconductor layer after forming the second insulating film,
- wherein a part of oxygen in the first insulating film is desorbed during the first heat treatment, and
- wherein a part of the desorbed oxygen is supplied to the oxide semiconductor film.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating film over a substrate;
- forming an oxide semiconductor film over and in contact with the first insulating film;
- patterning the oxide semiconductor film to form an oxide semiconductor layer that includes a region comprising c-axis-aligned crystalline oxide semiconductor that is a non-single-crystal oxide material;
- forming a second insulating film covering the oxide semiconductor layer;
- and
- performing a second heat treatment to the oxide semiconductor layer after forming the second insulating film,
- wherein a part of oxygen in the second insulating film is desorbed during the second heat treatment, and
- wherein a part of the desorbed oxygen is supplied to the oxide semiconductor layer.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating film over a substrate;
- forming an oxide semiconductor film over and in contact with the first insulating film;
- patterning the oxide semiconductor film to form an oxide semiconductor layer that includes a region comprising c-axis-aligned crystalline oxide semiconductor that is a non-single-crystal oxide material;
- forming a second insulating film covering the oxide semiconductor layer;
- forming a third insulating film covering the second insulating film;
- performing a second heat treatment to the oxide semiconductor layer after forming the third insulating film,
- wherein a part of oxygen in the third insulating film is desorbed during the second heat treatment, and
- wherein a part of the desorbed oxygen is supplied to the oxide semiconductor layer.
Dependencies are inferred from the claim text.