US 2015/0087108 A1 · Process, Film, and Apparatus for Top Cell for a PV Device

Abstract

This disclosure describes systems and methods for making at least a portion of a photovoltaic device. This may include a method of manufacturing, an optimization procedure and an apparatus for the PECVD (plasma enhanced chemical vapor deposition) of thin films over large area substrates. In particular, the system may be used to deposit thin film silicon material for photovoltaic (PV) applications. The photovoltaic device may be achieved by a combination of plasma chamber design (e.g., inter-electrode separation) and plasma process parameters (e.g., pressure, applied RF voltage, etc.) to optimize the doped and/or intrinsic layers of the solar cell (e.g., p-i-n junction).

Claims19

Dependent claims

A vacuum chamber for depositing films for solar devices, comprising:

a pressure control system configured to control a process pressure in the vacuum chamber that is configured to deposit amorphous silicon on a substrate comprising a surface area of at least 1 m2;
a first active electrode is configured to provide alternating power to a plasma processing region of the vacuum chamber;
and
a second electrode that is disposed opposite the first electrode and is configured to be separated from the first electrode by a separation distance that is based, at least in part, on an inter-electrode separation range comprising a product of the process pressure and the separation distance, wherein the inter-electrode separation range comprises a range of values between 0.18 mbar·cm and 16 mbar·cm, and wherein the process pressure comprises a pressure of at least 0.2 mbar and the separation distance comprises a distance of at least 0.9 cm.

1 more element

A method for making a portion of a solar device, comprising:

forming a first p-doped amorphous silicon film on a substrate comprising a layer transparent conductive oxide, the first p-doped amorphous silicon film comprising a thickness between 1 nm to 6 nm;
forming a second p-doped amorphous silicon film on the first p-doped amorphous silicon film, the second p-doped amorphous silicon film comprising a thickness between 5 nm to 25 nm;
exposing the substrate to a water vapor plasma for no more than two minutes at a pressure range between 0.05 mbar and 1 mbar and radio frequency power at least between 50 W and 500 W;
forming one or more films of amorphous silicon or amorphous silicon carbide, the one or more films of amorphous silicon or amorphous silicon carbide comprising a thickness between 4 nm to 16 nm;
and
forming one or more layers of an intrinsic amorphous silicon film on top of the one or more films of amorphous silicon at a temperature less than or equal to 250 C and greater than or equal to 150 C, the intrinsic amorphous silicon film comprising a target thickness between 150 nm to 300 nm.

3 more elements

Dependencies are inferred from the claim text.

Process, Film, and Apparatus for Top Cell for a PV Device

Life of this patent

Process, Film, and Apparatus for Top Cell for a PV Device

Life of this patent

Abstract

Claims19