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US 2015/0087102 A1Published application
Surface Treatment for BSI Image Sensors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShiu-Ko JangJian, Chin-Nan Wu, Chun Che Lin
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Abstract
A method comprises implanting ions in a substrate to form a plurality of photo diodes, forming an interconnect layer over a first side of the substrate and applying a first halogen treatment process to a second side of the substrate and forming a first silicon-halogen compound layer over the second side of the substrate as a result of applying the first halogen treatment process.
Claims20
A method comprising:
- implanting ions in a substrate to form a plurality of photo diodes;
- forming an interconnect layer over a first side of the substrate;
- and
- applying a first halogen treatment process to a second side of the substrate and forming a first silicon-halogen compound layer over the second side of the substrate as a result of applying the first halogen treatment process.
1 more element
A method comprising:
- forming an image sensor adjacent to a first side of a substrate;
- thinning a second side of the substrate;
- performing a halogen treatment on the second side of the substrate;
- and
- forming a backside illumination layer on the second side of the substrate.
2 more elements
A method comprising:
- forming a plurality of photo diodes in a substrate;
- forming an interconnect layer over a first side of the substrate;
- applying a first halogen treatment process to the first side of the substrate and forming a first silicon-halogen compound layer over the first side of the substrate as a result of applying the first halogen treatment process;
- and
- applying a second halogen treatment process to a second side of the substrate and forming a second silicon-halogen compound layer over the second side of the substrate as a result of applying the second halogen treatment process.
2 more elements
Dependencies are inferred from the claim text.