Method for forming semiconductor device
AssigneeSilicon Optronics, Inc.
InventorPai-Chun ZUNG
Life of this patent
Estimating the term…
Abstract
A method for forming a semiconductor device includes providing a wafer having a plurality of chip regions, in which each chip region includes a sensing array on a front side of the wafer. A plurality of through silicon vias is formed in the wafer from a back side of the wafer, in which the plurality of through silicon vias is electrically connected to the plurality of sensing arrays. A filter layer is formed on the plurality of sensing arrays after the plurality of through silicon vias is formed. A cover plate is attached to the front side of the wafer to cover the filter layer.
Claims21
A method for forming a semiconductor device, comprising:
- providing a first wafer having a plurality of chip regions, wherein each chip region has a sensing array on a front side of the first wafer;
- forming a plurality of through silicon vias in the first wafer from a back side of the first wafer, wherein the plurality of through silicon vias is electrically connected to the plurality of sensing arrays;
- forming a filter layer on the plurality of sensing arrays after the plurality of through silicon vias is formed;
- and
- attaching a cover plate to the front side of the first wafer to cover the filter layer.
A method for forming a semiconductor device, comprising:
- providing a first wafer having a plurality of chip regions, wherein each chip region has a sensing array on the first wafer;
- forming a plurality of through silicon vias in the first wafer, wherein the plurality of through silicon vias is electrically connected to the plurality of sensing arrays;
- forming a filter layer on the plurality of sensing arrays after the plurality of through silicon vias is formed;
- and
- attaching a cover plate to the first wafer to cover the filter layer.
Dependencies are inferred from the claim text.