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US 2015/0087100 A1Published application
Method of forming emitters for a back-contact solar cell
AssigneeSunPower Corporation
InventorsBo Li, Peter J. Cousins, David D. Smith
Life of this patent
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Abstract
Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
Claims20
A method of forming emitters for a solar cell, the method comprising:
- printing a first solid-state dopant source of a first conductivity type above a substrate, the first solid-state dopant source comprising a plurality of spaced apart regions;
- depositing by chemical vapor deposition a second solid-state dopant source of a second conductivity type above and between the plurality of spaced apart regions of the first solid-state dopant source, wherein the first conductivity type is opposite the second conductivity type;
- and
- patterning the second solid-state dopant source to form a plurality of first regions of the second solid-state dopant source alternating with but not in contact with the plurality of spaced apart regions of the first solid-state dopant source, and to form a plurality of second regions of the second solid-state dopant source on the plurality of spaced apart regions of the first solid-state dopant source;
- and
- driving dopants from the plurality of first regions of the second solid-state dopant source and from the first solid-state dopant source, but not from the plurality of second regions of the second solid-state dopant source, into the substrate.
3 more elements
A method of forming emitters for a solar cell, the method comprising:
- printing a first solid-state dopant source of a first conductivity type above a semiconductor layer formed on a thin dielectric layer formed on a substrate, the first solid-state dopant source comprising a plurality of spaced apart regions;
- depositing by chemical vapor deposition a second solid-state dopant source of a second conductivity type above and between the plurality of spaced apart regions of the first solid-state dopant source, wherein the first conductivity type is opposite the second conductivity type;
- and
- patterning the second solid-state dopant source to form a plurality of first regions of the second solid-state dopant source alternating with but not in contact with the plurality of spaced apart regions of the first solid-state dopant source, and to form a plurality of second regions of the second solid-state dopant source on the plurality of spaced apart regions of the first solid-state dopant source;
- and
- driving dopants from the plurality of first regions of the second solid-state dopant source and from the first solid-state dopant source, but not from the plurality of second regions of the second solid-state dopant source, into the semiconductor layer.
3 more elements
A method of forming emitters for a solar cell, the method comprising:
- forming, by a first dopant forming process type, a first solid-state dopant source of a first conductivity type above a substrate, the first solid-state dopant source comprising a plurality of spaced apart regions;
- and
- forming, by a second dopant forming process type, a first plurality of regions of a second solid-state dopant source of a second conductivity type above the substrate and alternating with, but not in contact with, the plurality of spaced apart regions of the first solid-state dopant source, wherein the first conductivity type is opposite the second conductivity type, and wherein the first dopant forming process type is different than the second dopant forming process type.
Dependencies are inferred from the claim text.