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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsYukio INAZUKI, Takashi YOSHII, Toyohisa SAKURADA, Akira IKEDA, Hideo KANEKO, Satoshi WATANABE, Yoshio KAWAI
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The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the silicon-containing inorganic film, comprising: forming the silicon-containing inorganic film such that a surface that will contact the resist film has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent; performing a silylation process after forming the silicon-containing inorganic film; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development.
A method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the silicon-containing inorganic film, comprising:
A method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the silicon-containing inorganic film, comprising:
A photomask blank comprising at least a silicon-containing inorganic film over a transparent substrate, the silicon-containing inorganic film being subjected to a silylation process, and a resist film on the silicon-containing inorganic film, wherein
A photomask blank comprising at least a silicon-containing inorganic film over a transparent substrate, the silicon-containing inorganic film being subjected to a silylation process, and a resist film on the silicon-containing inorganic film, wherein
Dependencies are inferred from the claim text.