Enhanced optical modulation using slow light

A system, comprising an integrated circuit, wherein the integrated circuit includes:

• a first semiconductor layer;
• an oxide layer disposed on a portion of the first semiconductor layer;
• and
• a second semiconductor layer, disposed on the oxide layer, to define a semiconductor-oxide-semiconductor diode, wherein the semiconductor-oxide-semiconductor diode is included in an optical waveguide configured to convey an optical signal;
• wherein the first semiconductor layer and the second semiconductor layer include electrical contacts configured to impart an electric potential across the semiconductor-oxide-semiconductor diode;
• and
• wherein the first semiconductor layer and the second semiconductor layer include geometric features that create a lattice-shifted photonic crystal optical waveguide having a group velocity of light that is lower than the group velocity of light in the first semiconductor layer and the second semiconductor layer without the geometric features.

An integrated circuit, comprising:

• a first semiconductor layer;
• an oxide layer disposed on a portion of the first semiconductor layer;
• and
• a second semiconductor layer, disposed on the oxide layer, to define a semiconductor-oxide-semiconductor diode, wherein the semiconductor-oxide-semiconductor diode is included in an optical waveguide configured to convey an optical signal;
• wherein the first semiconductor layer and the second semiconductor layer include electrical contacts configured to impart an electric potential across the semiconductor-oxide-semiconductor diode;
• and
• wherein the oxide layer has a dielectric constant more than ten times larger than that of silicon dioxide.